位置：成果数据库 > 期刊 > 期刊详情页
GaAs基上的InAs量子环制备
  • ISSN号：1000-3819
  • 期刊名称：《固体电子学研究与进展》
  • 时间：0
  • 分类：TN304.054[电子电信—物理电子学]
  • 作者机构：[1]中国科学院半导体研究所,北京100083
  • 相关基金：国家重点基础研究专项经费（No.G2000068303）;国家自然科学基金（No.90301007,90101004,60290084）;国家高技术研究与发展项目（No.2002AA311170）
作者： 李凯[1], 叶小玲[1], 金鹏[1], 王占国[1]
关键词： 砷化铟量子环, 分子束外延, 砷化铟量子点, 覆盖, InAs quantum rings, molecular beam epitaxy, InAs quantum dots, capping
中文摘要：

在分子束外延系统中，利用3nm GaAs薄盖层将InAs自组装量子点部分覆盖，然后在500℃以及As2气氛中退火一分钟，制成纳米尺度的InAs量子环。这一形成敏感地依赖于退火时的生长条件和生长InAs自组装量子点时的淀积量。InAs在GaAs表面的扩散以及同时发生的In—Ga互混控制着InAs量子环的形成。

英文摘要：

Nano-sized InAs quantum rings were fabricated on GaAs substrate by molecular beam epitaxy by partly capping the InAs self-resembled quantum dots （SAQDs） with 3 nm GaAs thin cap and annealing for 1 minute at 500℃ in As2 atmosphere. The formation of quantum rings sensitively depends on the annealing temperature and As pressure together with the initial sizes of the InAs SAQDs. The redistribution of InAs on the GaAs surface, together with the simultaneous In-Ga alloying controls the formation of quantum rings.

同期刊论文项目
量子点应力场分布及电子结构与器件应用研究
期刊论文 7
材料尺寸效应及其相关科学问题
期刊论文 80 会议论文 11 获奖 2 著作 3
同项目期刊论文
Optical properties and g facto
Two-dimensional photonic band-
Surface morphology control of
Electronic structure of a hydr
Electronic structure of InSb q
Comparartive study for colloid
Photonic band structures of tw
Stark and Rashba effects in Ga
Growth of high density self-as
Electric field tunnable electr
Suppression of exciton recombi
Asymmetric quantum-confined St
Complex quantum ring structure
Influence of N doping on the R
Rashba spin-orbit coupling in
Mutual Passivation of Donors a
Electronic structures of GaAs/
Electronic states in InAs quan
High and electric field tunabl
Electronic structure of Mn-dop
稀磁半导体－自旋和电荷的桥梁
Nonlinear Reshba model and spi
Optical properties of GaN wurt
Spin-polarized transport in on
Electronic structures of N qua
Highly anisotropic Zeeman spli
Mean-field study of Fe2+- and
Molecular beam epitaxy InAs do
Evolution of InAs nanostructur
Electronic structure and g fac
Shape and spatial correlation
Electron g factors and optical
Electronic structure and elect
Quantum mechanical effects in
Rashba spin splitting in biase
Design of shallow acceptors in
Spinpolarized transport in a l
Linear-Polarization Optical Pr
Effects of the wave function l
Preparation and AFM characteri
Electron and hole states in di
Hole Rashba effect and g-facto
Giant Zeeman splitting in mang
Growth of low-density InAs/GaA
Electronic structure and bindi
Electronic structure of parama
Enhanced visibility of graphem
Electronic structure of ZnO wu
Cr-doped InAs self-organized d
Room-temperature continuous-wa
Effects of shape and magnetic
Chemical trends of defect form
In离子掩模注入GaAs(001)衬底的均匀有序纳米团簇的形成和扩散
利用多层堆垛InAs/GaAs量子点结构实现1.3μm光致发光
InP基近红外波段量子线激光器的电致发光谱
CdSe量子棒的线偏振光学性质
Photonic band structures of two-dimensional photonic crystals with deformed lattices
Cr掺杂InAs自组织量子点的分子束外延生长及磁性质
First-principle study of native defects in CuScO2 and CuYO2
埋置量子点应力分布的有限元分析
Ge／Si半导体量子点的应变分布与平衡形态
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots
Molecular dynamics study of mosaic structure in the Ni-based single-crystal superalloy
Effect of the synthesis method of SnSb anode materials on their electrochemical properties
Influence of InAs deposition thickness on the structural and optical properties of InAs quantum wires
期刊信息
  • 《固体电子学研究与进展》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:南京电子器件研究所
  • 主编：杨乃彬
  • 地址：南京中山东路524号(南京160信箱43分箱)
  • 邮编：210016
  • 邮箱：gtdz@chinajournal.net.cn
  • 电话：025-86858161
  • 国际标准刊号：ISSN：1000-3819
  • 国内统一刊号：ISSN：32-1110/TN
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵双效期刊,江苏省第六届优秀期刊,工信部09-10年期刊编辑质量优秀奖
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,中国中国科技核心期刊,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:2461