通过定向凝固实验,研究Cu-Ge合金中的包晶反应过程。大的包晶反应三相区被用于研究包晶反应期间三相区界面的稳定性。在不同的生长条件和成分下,三相区呈现不同的生长形态。在Cu-13.5%Ge亚包晶合金中,随着抽拉速率从2μm/s提高到5μm/s,观察到了包晶相界面的失稳现象,而此时初生相的熔化界面相对稳定。但在Cu-15.6%Ge过包晶合金中,当抽拉速率达到5μm/s时,初生相重熔界面呈现非平面形态。基于成分过冷理论,分析初生相重熔界面和包晶相凝固界面的形态稳定性。
Peritectic reaction was studied by directional solidification of Cu-Ge alloys.A larger triple junction region of peritectic reaction was used to analyze the interface stability of the triple junction region during peritectic reaction.Under different growth conditions and compositions,different growth morphologies of triple junction region are presented.For the hypoperitectic Cu-13.5%Ge alloy,as the pulling velocity(v) increases from 2 to 5 μm/s,the morphological instability of the peritectic phase occurs during the peritectic reaction and the remelting interface of the primary phase is relatively stable.However,for the hyperperitectic Cu-15.6%Ge alloy wim v=5 μm/s,the nonplanar remelting interface near the trijunction is presented.The morphological stabilities of the solidifying peritectic phase and the remelting primary phase are analyzed in terms of the constitutional undercooling criterion.