中文摘要：

在绝缘体上硅（Silicon-on-insulator,SOI）材料的基础上,建立了SiGe-SOI微纳米尺寸的光波导结构模型,选取了损耗较小的S型SiGe-SOI弯曲光波导进行设计,并对其直波导和弯曲波导的模场进行了分析。设计中采用保角变换和三维全矢量BPM算法相结合的方法,对SiGe-SOI弯曲光波导进行了弯曲损耗分析,得到了弯曲半径对弯曲损耗的影响,给出了影响微纳米SiGe-SOI弯曲光波导设计的敏感参数。最后根据理论分析的结果,绘制了不同宽度的光波导版图,制作了微纳米SiGe-SOI弯曲光波导,并对其进行了测试分析,最终实验结果与理论分析一致,从而验证了该设计方法和理论分析的正确性。

英文摘要：

The micro-nano structure of SiGe-SOI optical waveguide is built based on SiliconOn-Insulator（SOI）material.The S type structure of SiGe-SOI bending waveguide is selected,which has low loss.The mode fields of straight and bending waveguides are analyzed.The method of combining the conformal transformation and the three-dimensional full vectorial BPM algorithm is used in the design.Bending loss of SiGe-SOI bending waveguide as a function of bending radius is analyzed,and the sensitive parameters of micro-nano SiGe-SOI bending waveguide are given.Finally,according to the result of theoretical analysis,the optical waveguide layouts of different widths are draw,and the micro-nano SiGe-SOI bending waveguides are made and tested.The final experimental results show good agreement with theoretical analysis,verifying the correctness of the design method.