借助指数掺杂与均匀掺杂光电阴极的量子效率公式,提出了采用加权平均法表示的反射式变掺杂光电阴极量子效率理论模型.使用该模型对某掺杂结构的反射式GaAs光电阴极量子效率曲线进行了拟合,获得了最佳的拟合效果,且模型的拟合结果能够定量地揭示材料的变掺杂结构,在不同入射光波段对阴极量子效率的贡献不相同这一现象.针对此现象进行了深入地分析和探讨.
The theoretical model of quantum efficiency of the reflective varied doping GaAs photocathode is proposed, which adopts the weighted mean method based on the quantum efficiency formula of exponential doping and uniform doping photocathode. By this model the quantum efficiency curves of a reflective GaAs photocathode under varied doping structure have been fit and we obtained the precise best fit in different incident photon wavehands. The phenomena that the contributions of doping structures to the cathode quantum efficiency are different was discovered. This phenomena has been analysed and discussed detailedly in the paper.