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中文摘要：
通过研究指数掺杂GaAs光电阴极中光电子扩散漂移长度与均匀掺杂GaAs光电阴极中光电子扩散长度的差异,确定透射式指数掺杂GaAs光电阴极的最佳厚度范围为1.6—2.2μm.利用量子效率公式对透射式指数掺杂GaAs光电阴极最佳厚度进行了仿真分析,发现厚度为2.0μm时阴极积分灵敏度最大.外延生长阴极厚度分别为1.6和2.0μm的两种透射式指数掺杂GaAs样品并进行了激活实验,测得样品的积分灵敏度分别为1228和1547μA/lm,两者的比值为79.6%.实验结果与仿真结果符合.
英文摘要：
The difference between the diffusion drift length of photoelectrons in exponential-doping GaAs photocathode and that in uniform-doping GaAs photocathode is studied. According to quantum equations, the optimized thickness of transmission-mode exponential-doping GaAs photocathode is simulated to be 2. 0 μm. Two transmission-mode exponential-doping GaAs samples with the thickness of 1. 6 and 2. 0 μm are activated by （ Cs,O） alternation technique. Integral sensitivities of the two samples are 1228 and 1547 μA/lm,respectively. The ratio of integral sensitivities of the two samples is 0. 796∶ 1,which agrees with the simulation result.
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