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中文摘要：
通过在一维连续性方程光电子产生函数项中加入短波约束因子,修正了指数掺杂和均匀掺杂透射式GaAs光电阴极量子效率公式.利用修正的透射式阴极量子效率公式分别拟合制备的指数掺杂和均匀掺杂透射式阴极量子效率实验曲线,符合得很好.另外拟合得到的阴极性能参数表明,由于内建电场的作用,指数掺杂阴极的性能要好于均匀掺杂阴极,指数掺杂结构能够明显提高透射式阴极的量子效率.
英文摘要：
The quantum yield formulas for exponential-doping and uniform-doping transmission-mode GaAs photocathodes are modified by adding a shortwave constraint factor to the photoelectron generation function in a one-dimensional continuity equation.Based on the modified transmission-mode quantum yield formulas,the experimental exponential-doping and uniform-doping transmission-mode quantum yield curves are respectively fitted,and the fitted curves are consistent well with the experimental curves.In addition,the fitted cathode performance parameters indicate that as compared with the uniform-doping photocathode,the exponential-doping photocathode can obtain a higher cathode performance because of the built-in electric field.The exponential-doping structure can effectively increase the quantum yield of transmission-mode photocathode.
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Variation of spectral response for exponential-doped transmission-mode GaAs photocathodes in the pre
Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs phot
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