中文摘要：

AlN 电影被在各种各样的底部电极上劈啪作响的反应收音机频率 RF 扔，例如艾尔， Ti，瞬间， Au/Ti，和 Pt/Ti。AlN 薄电影的取向上的底层金属的效果被调查。X 光检查衍射，原子力量显微镜学，和地排放扫描电子显微镜学的结果证明 AlN 电影的取向显然取决于底层金属的类型。在各种各样的金属电极上扔的 AlN 电影的差别在在 AlN 材料和底层金属之间的格子失配和热扩大系数被归因于差别。在 Pt/Ti 电极上扔的 AlN 电影高度与井粗糙的圆柱的结构揭示 c 轴取向。在完成高质量的 AlN 电影和高效的电影体积的 Pt/Ti 电极的积极角色声学的共鸣器 FBAR 可以被归因于更小的格子失配以及在扔的 AlN 材料和 Pt/Ti 电极底层之间的热扩大系数的类似。

英文摘要：

AlN films were deposited by reactive radio frequency （RF） sputtering on various bottom electrodes, such as Al, Ti, Mo, Au/Ti, and Pt/Ti. The effects of substrate metals on the orientation of AlN thin films were investigated. The results of X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy show that the orientation of AlN films depends on the kinds of substrate metals evidently. The differences of AlN films deposited on various metal electrodes are attributed to the differences in lattice mismatch and thermal expansion coefficient between the AlN material and substrate metals. The AlN film deposited on the Pt/Ti electrode reveals highly the c-axis orientation with well-textured columnar structure. The positive role of the Pt/Ti electrode in achieving the high-quality AlN films and high-performance film bulk acoustic resonator （FBAR） may be attributed to the smaller lattice mismatch as well as the similarity of thermal expansion coefficient between the deposited AlN material and the Pt/Ti electrode substrate.