中文摘要：

FLASH存储器工艺已经普及到25 nm,并正在进军15 nm,其存储密度也从单阶存储单元提高到多阶存储单元。相比于单阶存储单元,多阶存储单元可以降低存储器的价格,但是存储性能会降低。提出了一种针对多阶存储单元器件编程的方法,该方法能够提高多阶存储单元的速度,且能够减少位错误率,从而获得接近单阶存储单元器件的性能。

英文摘要：

While flash memory process continuously going down from 25 nm to 15 nm, its density was upgraded from single-level cell （SLC） to multi-level cell （MLC）. Compared with SLC, MLC technology had advantage of lower price, but disadvantage of downgraded performance and reliability. The paper applied SLC- like programming methodology on MLC NAND flash. In this way, the MLC flash performance was expected to be improved as well as the bit error rate to be reduced.