Uniformity of TiN Films Fabricated by Hollow Cathode Discharge
- 时间:0
- 分类:TG156.34[金属学及工艺—热处理;金属学及工艺—金属学] TN248.25[电子电信—物理电子学]
- 作者机构:[1]State Key Lab. of Advanced Welding Production & Technology, School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China, [2]Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
- 相关基金:Supported by National Natural Science Foundation of China (Nos. 10775036, 50773015), Program for New Century Excellent Talents in University in China and City University of Hong Koug Strategic Research of China (No. 7002138)
- 相关项目:微小电感耦合射频等离子体细长管筒内表面离子注入新技术及应用研究
关键词:
空心阴极放电, 氮化钛薄膜, 硬度均匀性, 物理气相沉积, 表面粗糙度, 制备, 原子力显微镜, 等离子体, hollow cathode, TiN film, uniformity