采用孪生对靶直流磁控溅射的方法,在室温下制备了ZnO:Al(ZAO)薄膜材料,将其应用于柔性衬底非晶硅薄膜太阳电池的窗口电极。通过调整Ar气流量(1.67×10-7 m3/s~8.33×10-7 m3/s),优化了ZAO薄膜的结构、成份及光电性能。得到如下结论:理想的Ar气流量为3.33×10-7 m3/s,此时ZAO薄膜具有较高的晶化率和C轴择优取向,薄膜的霍尔电阻率达为4.26×10-4Ω.cm,载流子浓度达到1.8×1021cm-3,可见光波长范围内的光学透过率达到85%以上。将优化后的ZAO薄膜用于柔性衬底非晶硅薄膜太阳电池的窗口电极,转化效率达到了4.26%。
In this paper,ZnO:Al(ZAO) films are deposited by using twin-target DC magnetron sputtering at room temperature,which are used as the window electrodes of flexible substrate a-Si:H solar cells.ZAO films′ structure,composition and photo-electronic properties are optimized by adjusting the Ar flow parameter from 1.67×10-7m3/s to 8.33×10-7m3/s.The experimental results show that the ideal Ar flow is 3.33×10-7m3/s.The optimized ZAO films with high crystallization structure and c-axis orientation are obtained.The films′ Hall resistivity is 4.26×10-4 Ω·cm,the carrier concentration is 1.8×1021 cm-3,and the visible region light transmittance is over 85%.Using the ZAO films in the window electrodes of flexible substrate a-Si:H solar cells,the conversion efficiency is extended to 4.26%.