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中文摘要：
通过对Si基GaN材料的电学性能进行测量分析,确认了该材料体系所特有的寄生导电层现象。研究了寄生导电层对Si基GaN高电子迁移率晶体管（HEMT）微波功率性能和击穿性能的不良影响。通过材料生长工艺的优化,降低了寄生导电层的导电性,获得了击穿电压超过320V的Si基GaN HEMT功率电子器件。
英文摘要：
Abstract： By the analysis of the electrical performance of the Ⅲ-N layer on Si substrates, the parasitic conductive layer and associated effects were demonstrated. Effects of the parasitic con- ductive layer on the microwave power performance and electrical breakdown of the GaN high elec- tron mobility transistors （HEMTs） on Si substrates were investigated. By the optimization of the growth condition of the GaN HEMTs, the conductivity of the parasitic conductive layer was re- duced, and power GaN HEMTs on Si substrates with breakdown voltage beyond 320 V were ob- tained.
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