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中文摘要：
利用MOCVD法,在7．62 cm蓝宝石衬底上生长了InAlN薄膜及InAlN/GaN 异质结材料.利用XRD、AFM、Hall 等测试方法对材料的组分、表面形貌、电学性质等进行了分析,InAlN 薄膜中 In 含量随生长温度的升高明显降低,材料表面为三维岛状结构；与AlGaN/GaN异质结材料相比,InAlN/GaN 异质结的高温电子输运特性更好,773 K 下 InAlN/GaN 异质结的迁移率为130 cm2/（v·s）,明显高于 AlGaN/GaN异质结的67 cm2/（v·s）.
英文摘要：
InAlN thin films and microstructures were grown on 7.62 cm sapphire substrates by MOCVD.In con-tent,surface morphology,electronic properties were characterized by XRD,AFM and Hall.The results indicated that the In content decrease with increasing growth temperature and the surface of the InAlN film was three di-mensional like.High temperature hall tests showed that high temperature electron mobility was much higher for InAlN/GaN compared to AlGaN/GaN heterostructure.
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