采用固相法制备Er、Zr共掺铋层状结构陶瓷(K0.16Na0.84Bi)0.47Er0.02Bi4Ti4–xZrxO15(KNBET–Zr–x,0≤x≤0.12,x为摩尔分数),研究了不同Zr含量对样品的结构、电学与上转换发光性能的影响。结果表明:所有样品均为单一的正交相铋层状结构,无其他杂相出现。随着Zr掺入量的增加,晶格常数a、b、c不断增大,正交畸变(b/a)的值逐渐减小;适量Zr掺杂使样品的介电损耗降低,剩余极化强度2Pr和压电常数d33得到提高;当x=0.04时,样品具有最佳的综合电学性能:介电损耗tanδ=0.61%、压电性能d33=24 p/CN、剩余极化2Pr=3.02μC/cm2。在980 nm近红外光源激发下,所有样品均呈现出较强的绿光发射,对应于2H11/2→4I15/2和4S3/2→4I15/2的跃迁。随着Zr离子掺入量增加,正交畸变(b/a)减少,荧光强度逐渐下降。
Er and Zr vodoped bismuth layered structured ceramics (BLSFs), (K0.16Na0.84Bi)0.47Er0.02Bi4Ti4_xZrxO15 (KNBET-Zr-x,0≤x≤0.12) were synthesized by a solid state reaction method. The structural, electrical and up-conversion (UC) photoluminescence properties were investigated. The results show that all the samples possess a single orthorhombic BLSFs structure without any secondary phase. The lattice parameters a, b and c increase with increasing Zr4+ substitution and the values of orthorhombic distortion (b/a) calculated decrease gradually. The doping of an appropriate content of Zr4+ ions can decrease the tang and increase the 2Pr as well as d33. The sample with x=0.04 has the optimal comprehensive performance, i.e., dielectric loss tan6 (0.61%), piezoelectric properties d33 (24 p/CN) and remanent polarization 2Pr (3.02μC/cm2). In addition, under the 980 nm near infrared excitation, all the samples emit a bright UC greenlight corresponding to the transitions 2Hll/2→4/15/2 and 4S3/2→4/15/2 level, respectively. The weaker UC emission after Zr introduction can be attributed to the decreased orthorhombic distortions (b/a).