采用固相法制备(Na Bi)0.5–x(Li Ce)xBi8Ti7O27铋层状共生结构陶瓷,研究了陶瓷的结构与电性能。结果表明:所有(Na Bi)0.5–x(Li Ce)xBi8Ti7O27陶瓷样品均为共生结构,Li,Ce掺杂没有改变其固有结构;适量Li、Ce掺杂使样品晶粒尺寸均匀,且密度增加,达到ρ=6.88 g/cm3;剩余极化强度Pr和压电常数d33均有显著提高,分别从4.19μC/cm2和8 p C/N提高到8.39μC/cm2和20 p C/N;在645℃和657℃处,样品介电温谱出现介电双峰;当x=0.25时,陶瓷样品综合性能达到最佳:d33=20 p C/N,平面机电耦合系数kp=8.86%,厚度机电耦合系数kt=15.15%,机械品质因子Qm=2 152,Pr=8.39μC/cm2。600℃退极化处理后,d33仍有15 p C/N,表明该材料在高温领域具有良好的应用前景。
The intergrowth bismuth layer-structured ceramic of (NaBi)0.5-x(LiCe)xBi8Ti7O27 was prepared by a solid-state reaction method. The microstructure and electrical properties of the samples were characterized. The results reveal that the (NaBi)0.5-x(LiCe)xBi8Ti7O27 material possesses intergrowth, and the structure does not change after the doping of Li/Ce. The proper content of Li/Ce substitute can increase the density of ceramic, and the maximum density is 6.88 g/cm3. The remanent polarization, Pr, and the piezoelectric constant value of the samples increase from 4.19 μC/cm2 to 8.39 μC/cm2 and from 8 pC/N to 20 pC/N, respectively. Two dielectric anomalies of Na0.5Bi8.5Ti7O27 occur at 645 ℃ and 657 ℃. When x = 0.25, the ceramic exhibits the optimum electrical properties, i.e., d33 = 20 pC/N, kp =8.86 %, kt = 14.11%, Qm = 2 152, Pr = 8.39 ℃C/cm2. The d33 of the component ceramic sample annealed at 600 ℃ is 15 pC/N, indicating that the ceramic is a promising material for the high-temperature applications.