Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser
- ISSN号:1009-0630
- 期刊名称:《等离子体科学与技术:英文版》
- 分类:TN304.23[电子电信—物理电子学] TM564[电气工程—电器]
- 作者机构:[1]Applied Physics Department, Xi'an University of Technology, Xi'an 710048, China, [2]State Key Laboratory of Electrical Insulation and Power Equipment,Xi'an Jiaotong University, Xi'an 710049, China
- 相关基金:supported by the Key Project of National Natural Science Foundation of China (No. 50837005); the National Science Foundation of China (Nos. 10876026, 51107099); the Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment (No. EIPE09203); the Natural Science Foundation of Shaanxi Province (No. 2010JM7003); the Scientific Research Program Funded by Shaanxi Provincial Education Department (No. 11JK0540); the Foundation for Outstanding Doctoral Dissertation of Xi'an University of Technology (105-210904)
关键词:
半绝缘砷化镓, 光电开关, 表面闪络, 激光触发, 实验, 高功率, 半导体表面, 光导开关, GaAs, photoconductive switches, photo-activated charge domain, longevity
中文摘要:
swshi@mail.xaut.edu.cn