位置：成果数据库 > 期刊 > 期刊详情页
<span>Research on Flashover Characteristics and the </span><span>Physical Mechanis
  • ISSN号：0018-9197
  • 期刊名称：IEEE Journal of Quantum Electronics
  • 时间：2014.7.1
  • 页码：568-574
  • 相关项目：光子作用下砷化镓光电导开关沿面闪络机理及其抑制方法研究
作者： Cheng Ma, Wei Shi, Mengxia Li, Huaimeng Gui|
同期刊论文项目
光子作用下砷化镓光电导开关沿面闪络机理及其抑制方法研究
期刊论文 12 会议论文 1 获奖 6
同项目期刊论文
Mechanism Analysis of the Flashover Quenching the Photoconductive Semiconductor Switch in SF6
Research on the Failure Mechanism of High-Power&nbsp;GaAs PCSS<br />
Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch
Influence of the incident laser pulse&nbsp;energy on jitter time of GaAs&nbsp;photoconductiv
Accurate measurement of the jitter time of GaAs photoconductive semiconductor switches triggered by
Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser
Impact of Current Filaments on the Material&nbsp;and Output Characteristics of GaAs&nbsp;Pho
Terahertz generation and detection with InGaAs-based large-area photoconductive devices excited at 1