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Mn掺杂二氧化锡纳米带的制备及光学性质的研究
  • ISSN号:1005-023X
  • 期刊名称:材料导报
  • 时间:2013.11.20
  • 页码:45-48
  • 分类:O734[理学—晶体学] TB34[一般工业技术—材料科学与工程]
  • 作者机构:[1]Institute of Physics and Electronic Information, Yunnan Normal University, Kunming 650092, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Grant Nos. 10764005 and 11164034) and the New Century Training Program Foundation for Talents from the Ministry of Education of China (Grant No. NCET-08-0926).
  • 相关项目:二氧化锡衍生物纳米带的气敏、光化敏感性质及应用研究
中文摘要:

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60 crystal linear defect states, 120 crystal linear defect states, and 180 crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.

英文摘要:

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.

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期刊信息
  • 《材料导报:纳米与新材料专辑》
  • 主管单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主办单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主编:
  • 地址:重庆市渝北区洪湖西路18号
  • 邮编:401121
  • 邮箱:matreved@163.com
  • 电话:023-67398525
  • 国际标准刊号:ISSN:1005-023X
  • 国内统一刊号:ISSN:50-1078/TB
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:3397