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High-quality single-crystal CdSe nanoribbons and their optical properties
  • 期刊名称:Opto-Electronic Letters
  • 时间:0
  • 页码:0161-0164
  • 语言:中文
  • 分类:O734[理学—晶体学] TB34[一般工业技术—材料科学与工程]
  • 作者机构:[1]Institute of Physics and Electronic Information, Yunnan Normal University, Kunming 650092, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Grant Nos. 10764005 and 11164034) and the New Century Training Program Foundation for Talents from the Ministry of Education of China (Grant No. NCET-08-0926).
  • 相关项目:CdE、ZnE(E=S或Se)及其三元化合物半导体纳米带掺杂物的光导性质研究
作者: 刘应开|
中文摘要:

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60 crystal linear defect states, 120 crystal linear defect states, and 180 crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.

英文摘要:

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.

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