位置：成果数据库 > 期刊 > 期刊详情页
n型AlGaN材料的电学和光学性质
  • 期刊名称：激光与红外，36，1057 （2006）
  • 时间：0
  • 相关项目：应用于紫外器件的AlGaN材料的生长机理和材料物理问题研究
同期刊论文项目
应用于紫外器件的AlGaN材料的生长机理和材料物理问题研究
期刊论文 26
同项目期刊论文
Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices
Elimination of crystallographic wing tilt of canti-bridged epitaxial laterally overgrown GaN films b
Growth of Highly Conductive n-Type Al0.7 Ga0.3N Film by Using AlN Buffer with Periodical Variation o
Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells
The origin of wing tilt for uncoalesced GaN grown on maskless grooved sapphire fabricated by wet che
Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wel
Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer
Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells
Characteristics of High In-content InGaN Alloys Grown by MOCVD
Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates
Observation of metallic indium clusters in thick InGaN layer grown by metal chemical vapor depositio
AlN外延薄膜的生长和特征
Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-ri
Growth of semi-insulating GaN using N-2 as nucleation layer carrier gas combining with an optimized
Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricate
The transport property of two dimensional electron gas in AlGaN/AIN/GaN structure
Three-Step Growth Optimization of AlN Epilayers by MOCVD
Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemica
使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构
Characteristics of GaN grown on 6H-SiC with different AIN buffers
AlGaN/AlN/GaN结构中二维电子气的输运特性
r面蓝宝石衬底上采用两步AlN缓冲层法外延生长a面GaN薄膜及应力研究