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Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device s
  • ISSN号：1454-4164
  • 期刊名称：Journal of Optoelectronics and Advanced Materials
  • 时间：0
  • 页码：1452-1456
  • 相关项目：非极性面高Al组分AlGaN基深紫外LED外延材料与器件的研究
作者： Song, M.|Chen, C.|Wu, Z.|Fang, Y.|Xiang, R.|Sun, Y.|Wang, H.|Yu, C.|Xiong, H.|Dai, J.|
同期刊论文项目
非极性面高Al组分AlGaN基深紫外LED外延材料与器件的研究
期刊论文 11 会议论文 1
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