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Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in
  • ISSN号：1071-1023
  • 期刊名称：Journal of Vacuum Science and Technology B
  • 时间：0
  • 页码：021005-021005
  • 相关项目：非极性面高Al组分AlGaN基深紫外LED外延材料与器件的研究
作者： Wu, Z. H.|Fischer, A. M.|Ponce, F. A.|Sun, Y. Q.|Yin, J.|Fang, Y. -Y|Dai, J. N.|Chen, C. Q.|Wei, Q. Y.|Li, T.|Sun, W.|
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非极性面高Al组分AlGaN基深紫外LED外延材料与器件的研究
期刊论文 11 会议论文 1
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