位置：成果数据库 > 期刊 > 期刊详情页
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1(1
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：051902-051902
  • 相关项目：非极性面高Al组分AlGaN基深紫外LED外延材料与器件的研究
作者： Wu, Z. H.|Tanikawa, T.|Murase, T.|Fang, Y. -Y.|Chen, C. Q.|Honda, Y.|Yamaguchi, M.|Amano, H.|Sawaki, N.|
同期刊论文项目
非极性面高Al组分AlGaN基深紫外LED外延材料与器件的研究
期刊论文 11 会议论文 1
同项目期刊论文
Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in
Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular
Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device s
Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates
Uniform InAs Quantum-dots on vicinal GaAs (100) substrates by pulsed atomic layer epitaxy via metal-
Occurrence and elimination of in-plane misoriented crystals in AIN epilayers on sapphire via pre-treatment control