中文摘要：

描述了混合晶向技术原理以及各种硅衬底晶向的反型层中载流子迁移率特性,分析了应变硅技术对载流子迁移率的增强机理,介绍了DSL这种应变硅技术的工艺实现方法。提出了将混合晶向技术和应变硅技术两者有机结合以提高载流子迁移率的局部化混合晶向应变硅基本思路,分析了基于该基本思路的局部化混合晶向应变硅CMOS结构及其电学性能。最后详细描述了局部化混合晶向应变硅CMOS结构工艺流程,为开发高性能、低功耗CMOS集成电路提供了一个科学合理的工艺制备方法。

英文摘要：

The hybrid crystal orientation technology（HOT）theory and carrier mobility characteristics in different crystal orientation Si＇s inversion layers were described.The carrier mobility improvement mechanisms of strained Si technology were analyzed.The process method of dual stress liners（DSL）was introduced which was one type of strained Si technology.One method of combining localized HOT and strained Si technology was proposed to increase MOSFET＇s carrier mobility,the CMOS schematic structure and electrical performance based on the proposed method were analyzed.Finally,the process flow of localized hybrid-orientation strained Si CMOS structure was described in detail,which provides one effective process manufacturing method for high-performance,low-power CMOS IC development.