以低层错能〈110〉取向单晶银为研究对象,采用EBSD和TEM等技术,系统分析了冷拔变形过程中的宏观裂化、微观裂化和界面失配角分布的变化规律与内在机制。研究结果表明,随应变量的增加,冷拔银单晶的宏观裂化不断加剧,变形带数量增加,宽度和间距减小。当应变量大于0.94时,形成了与冷拔方向平行的纤维状组织。与层错能相近的合金相比,纯金属单晶银的交滑移和攀移的被抑制程度降低,除了变形孪晶,在低层错能的单晶银中还出现大量随机捕捉位错界面和几何必须位错界面。界面失配角分析结果表明,低应变下,变形以位错滑移为主;中等应变下,滑移和孪生相互竞争;高应变下,孪生为主要变形机制。
Macroscopic subdivision, microscopic subdivision and boundary misorientation angle distribution of cold drawn Ag single crystal with 〈110〉 parallel to axis direction were investigated by EBSD and TEM. The results show that with the strain increasing, the macroscopic subdivision of the cold drawn Ag single crystal becomes severe, the number of deformation band increases, and the width and spacing of deformation bands decrease. When the strains are higher than 0.94, the fiber microstructure parallel to the axis direction of wires forms gradually. The suppression of cross-slip and climb decreases in cold drawn Ag single crystal in comparison with the alloys whose SFE approximates to that of Ag. Besides the deformation twins, there are an abundance of incidental dislocation boundaries and geometry necessary dislocation boundaries in the drawn Ag. The boundary misorientation angle analyses show that dislocation slip is the dominate deformation mechanism at low strains. At the medium strains, dislocation slip and twinning compete with each other. At high strains, twinning becomes the predominant deformation mechanism.