中文摘要：

采用化学气相沉积法（Chemical Vapor Deposition，CVD）制备了CVD—SiC陶瓷基片并在1500℃空气中进行预氧化处理，对比研究了预氧化前后CVD—SiC分别在1100、1300和1500℃静态水氧耦合环境下的氧化行为。采用扫描电子显微镜和X-射线衍射分析不同叠加氧化温度条件下表面形貌和物相演变规律。结果表明，预氧化后氧化（叠加氧化）和预氧化前氧化（水氧氧化）具有相似的氧化机理，均呈现出典型的抛物线型模式，两者的活化能分别为116kJ／mol和98．9kJ／mol。

英文摘要：

A SiC coating was deposited on SiC substrate by sequently oxidized in air at 1500℃Afterwards, superimposed chemical vapor deposition （CVD） , which was suboxidation tests were conducted at 1100, 1300 and 1500℃ in wet-oxygen atmosphere, respectively. The oxidation mechanisms were discussed based on the weight change of the specimen. The specimen morphology and phase evolutions were analyzed by the scanning electron microscopy and X-ray diffraction, respectively. The results showed that the superimposed oxidation and pre-oxidation share a similar parabolic mechanism,while their activation energies are 116 kJ/mol and 98.9kJ/mol, respectively.