中文摘要：

介绍了一种毫米波GaN基HEMT器件大信号等效电路模型。该模型采用SDD的建模方法。提出了I-V及C-V表达式,完成了直流及S参数的拟合,并分析了拟合结果。与18GHz的在片loadpull测试结果比较,模型仿真结果显示输出功率及效率与实测数据基本一致。

英文摘要：

A novel large signal equivalent circuit modeling of GaN HEMT has been presented. The large signal model was constructed by using the SDD form. I-V and C-V expressions were proposed and used to complete DC and S-parameters fittings. The results were analyzed by contrasting to the measurement results of the GaN HEMT. Single tone on-wafer load-pull measurement at 18 GHz was carried out for verification purpose. The results show that good agreements on output power and efficiency have been achieved between simulations and measurements.