采用酞氰铁高温热解方法在具有微立方结构的化学镀镍硅基底上生长了碳纳米管薄膜(Si/Ni-CNTs),并在20GW脉冲功率源系统中采用二极结构对其强流脉冲发射特性进行了研究。研究结果表明,在单脉冲发射条件下,随脉冲电场峰值的增大,Si/Ni-CNTs薄膜的发射电流峰值呈线性增加,当宏观场强达到31.4 V/μm时,发射脉冲电流的峰值可达到14.74kA,对应的发射电流密度1.23kA/cm2,在相同峰值,连续多脉冲情况下,碳纳米管薄膜具有良好的发射可重复性,且发射性能稳定。
Carbon nanotube films were synthesized on the surface of micro-cube array Si with electroless plated Ni layer(Si/Ni-CNTs) by pyrolysis of iron phthalocyanine (FePc). Intense pulsed field emission of CNTs was researched with diode structure on 20GW pulse power system. For single pulse emission,emission current peak of Ni/Si-CNTs linearly increases with pulse field peak; at the applied peak electric field of about 31.4V/μm, peak current and current density can achieve about 14.74kA and about 1.23kA/cm2 , emission current ability of CNTs was obviously better than that of report. For many continuous and same peak pulses emission, Si/Ni- CNTs are provided with good repeatability of pulsed emission,and present better emission stabi]itv