中文摘要：

GaN材料作为第三代半导体材料，具有宽禁带、直接带隙、耐腐蚀等优点，是一种非常有前景的MOEMS材料。由于GaN的刻蚀目前尚未成熟，因此图形化外延生长法是一种较好的选择。本文基于SOI（silicon-on-insulator）基片，利用硅的微加工技术和图形化GaN分子束外延生长工艺，设计并加工了工作在太赫兹波段的、可以在二维方向上运动的SOI基GaN光栅。光栅周期为16 μm，光栅宽度为6 μm，峰值位置为25.901 μm。通过仿真优化，设计的微驱动器在水平电压220 V时，水平方向上的位移为±7.26 μm；垂直方向加200 V电压时，垂直位移2.5 μm。为了研究在图形化SOI衬底上外延生长的InGaN/GaN量子阱薄膜的光学性能，用激光拉曼光谱仪对薄膜进行了光致发光光谱实验。实验结果表明，InGaN/GaN量子阱薄膜具有良好的发光性能，其发光范围为350~500 nm，覆盖了紫外光到黄绿光。由于局域态效应与禁带收缩的作用，随着环境温度由10 K升高至室温，薄膜的PL光谱的峰位呈现“S”形变化趋势。

英文摘要：

As the third generation of semiconductor material, GaN has many advantages, such as wide bandgap, direct band gap, corrosion resistance and so on. Also, GaN is a very promising material for MOEMS. Because the etching of GaN material is not mature, epitaxial growth on patterned substrate is more helpful for GaN/SOI device. A movable GaN grating on patterned SOI substrate was designed and fabricated with Si micromaching and molecular beam epitaxy process of GaN. The grating actuated by a SOI electrostatic comb-drive micro-actuator could move in two dimensional directions and it could be used as filter in Terahertz wavelength. The period and width of the grating is 16 and 6 μm, respectively. The resonant wavelength is 25.901 μm. An horizontal displacement of ±7.26 μm is obtained at 220 V of horizontal voltage with simulation. When the vertical voltage is 200 V, the displacement is 2.5 μm. The photoluminescence （PL） measurements of the deposited InGaN/GaN multiple quantum well on patterned SOI substrate are carried out with laser Raman spectrometer. The experimental results show that good optical property of the InGaN/GaN multiple quantum well. A wide emission wavelength from 350 to 500 nm is demonstrated. With the increase of temperature from 10 K to room temperature, the photoluminescence peak position appears a tendency of “S” shape because of the localized effect and band shrink in the InGaN/GaN quantum well.