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A baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN929.5[电子电信—通信与信息系统;电子电信—信息与通信工程] U284[交通运输工程—交通信息工程及控制;交通运输工程—道路与铁道工程]
  • 作者机构:[1]Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China, [2]University of Chinese Academy of Sciences, Beijing 100049, China
  • 相关基金:supported by the National Natural Science Foundation of China(No.61106025); the National High Technology Research and Develop Program of China(No.2012AA012301); the National Science and Technology Major Project of China(No.2013ZX03006004)
中文摘要:

<正>This paper proposes a baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness for use in the electronic toll collection system.A double-mode detection method,including amplitude detection and frequency detection,is proposed to reject interference and reduce false wake-ups.An improved closed-loop band-pass filter and a DC offset cancellation technique are also newly introduced to enhance the sensitivity robustness.The circuit is fabricated in TSMC 0.18μm 3.3 V CMOS technology with an area of 0.12 mm2.Measurement results show that the sensitivity is -54.5 dBm with only a±0.95 dBm variation from the 1.8 to 3.3 V power supply,and that the temperature variation of the sensitivity is±1.4 dBm from -50 to 100℃. The current consumption is 1.4 to 1.7μA under a 1.8 to 3.3 V power supply.

英文摘要:

This paper proposes a baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness for use in the electronic toll collection system.A double-mode detection method,including amplitude detection and frequency detection,is proposed to reject interference and reduce false wake-ups.An improved closed-loop band-pass filter and a DC offset cancellation technique are also newly introduced to enhance the sensitivity robustness.The circuit is fabricated in TSMC 0.18μm 3.3 V CMOS technology with an area of 0.12 mm2.Measurement results show that the sensitivity is -54.5 dBm with only a±0.95 dBm variation from the 1.8 to 3.3 V power supply,and that the temperature variation of the sensitivity is±1.4 dBm from -50 to 100℃. The current consumption is 1.4 to 1.7μA under a 1.8 to 3.3 V power supply.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754