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碳化硅中惰性气体离子辐照引起缺陷的研究
  • 期刊名称：原子核物理评论，第23卷，第2期，185－188页 2006年
  • 时间：0
  • 分类：O571[理学—粒子物理与原子核物理;理学—物理]
  • 作者机构：[1]中国科学院近代物理研究所,甘肃兰州730000
  • 相关基金：中国科学院西部之光基金资助项目;园家自然科学基金资助项目（10575124）
  • 相关项目：碳化硅中高能惰性气体离子注入对断裂韧性的作用机理研究
关键词： 碳化硅, 辐照损伤, 缺陷, 氦泡, silicon carbide , irradiation damage , defect , helium bubble
中文摘要：

综述了有关碳化硅材料中惰性气体离子引起辐照缺陷研究的进展。包括借助多种方法对氦离子辐照的碳化硅中氦泡集团形成的剂量阈值的实验研究，基于过冷固体假设对氦泡阈值的理论解释，不同剂量氦泡的两种形态及其机理的研究，以及重惰性气体离子（Ne，Xe）辐照下缺陷演化的特点。

英文摘要：

This paper gives a review of our recent studies on the defect production in silicon carbide induced by energetic inert-gas-ion irradiation. The work includes the study of the dose threshold for helium bubble formation by combining TEM, RBS-channeling and PAS, the theoretical analysis of the dose threshold for bubble formation based on the Frozen-Matrix assumption, two types of bubble arrangement at different dose regions and the study of damage um-ion production behavior in the case of irradiation with heavier inert-gas-ions （ Ne, Xe） as a comparison to heliirradiation.

同期刊论文项目
碳化硅中高能惰性气体离子注入对断裂韧性的作用机理研究
期刊论文 40 会议论文 4
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