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中文摘要：
利用2MeV电子辐照氮化镓（GaN）异质结,辐照剂量分别为1×1015/cm2和5×1015/cm2。电子背散射衍射（EBSD）菊池图的图像质量IQ值随辐照剂量的增加而增大,对应的表层应变或畸变减小。扫描电镜能谱（SEM/EDS）分析发现氧原子在外延层心部发生富集,表明高能电子辐照在GaN外延层内引入晶格损伤。表层应变状态的改变与杂质扩散和辐照点缺陷的引入直接相关,其中晶格损伤是影响表面应变状态的主要因素。
英文摘要：
GaN heterostructures were irradiated by 2MeV electron beam.The fluencies reached 1×1015/cm2 and 5×1015/cm2,respectively.IQ values of EBSD kikuchi patterns increased with the increasing of electron irradiation.The corresponding strain or distortion of the surface decreased.SEM/EDS analysis showed that oxygen atoms enriched within the epilayers,which was attributed to the attraction from the damaged lattice by electron irradiation.It was assumed that the evolution of strain status was related to impurity diffusion and introduction of point defects,among of which lattice damage played the major role in the whole process.
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