中文摘要：

应用拉曼光谱研究了5 MeV Kr离子（注量分别为5×1013,2×1014,1×1015ions/cm2）室温注入6 H-SiC单晶及其高温退火处理后结构的变化。研究表明,注入样品的拉曼光谱中不仅出现了Si—C振动的散射峰,还产生了同核Si—Si键和C—C键散射峰。Si—C散射峰强度随退火温度升高而增强,当退火温度高达1000℃时,已接近未辐照SiC的散射峰强度。晶体Si—Si键散射峰强度随退火温度变化不大,而非晶Si—Si键散射峰强度随退火温度的增加逐渐消失。相对拉曼强度（Relative Raman Intensity,简称RRI）随注量的增加逐渐减小并趋于饱和,且不同退火温度样品的饱和注量不相同;RRI随退火温度的增加逐渐升高,这在低注量样品中表现得尤为明显。低、中、高3种注量样品的RRI随退火温度的增加从重合逐渐分离,并且退火温度越高,分离越大。

英文摘要：

Raman spectroscopy was used to study the structure changes of 6H-SiC single crystal implanted with 5 MeV Kr（Krypton） at room temperature and subsequently annealed at high temperature.The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks,but also homonuclear Si—Si and C—C bond vibration peaks.Si—C bond vibration peaks gradually strengthen with increasing temperature.When annealing at 1000 ℃,the peak intensity of Raman spectrum is close to that of virgin specimen.It is found that crystal Si—Si bond vibration peaks do not change when annealing,but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature.The Relative Raman Intensity（RRI） values decrease with increasing fluence and tend to saturate,but the saturation fluences is different for various anneal temperature.The RRI values increases with raising annealing temperature,which is more obvious in low implanted specimens.At the same time,the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.