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Simulated study on the InP/InGaAs DHBT under proton irradiation
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN[电子电信]
  • 作者机构:School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices ofChina, Xi'an 710071, China
  • 相关基金:Project supported by the National Basic Research Program of China (No. 2010CB327505), Advance Research project of China (No. 51308xxxx06), and Advance Research Foundation of China (No. 9140A08xxxx11DZ111).
中文摘要:

A 3D model simulation of InP/InGaAs/InP DHBT is reported in this paper.A comprehensive set of built-in physical models are described,including Stratton’s hydrodynamic model,high-fields mobility model and thermionic emission model.A mixed-mode environment is required for AC simulation instead of simulating an isolated HBT,in which the HBT is embedded in an external circuit,and the circuit voltage and current equations are solved along with the Poisson equation and transport equations.In AC simulation,simulator Sentaurus provides the computation of the small signal admittance Y matrix.From the results of Y matrix,the small signal equivalent circuit is constructed with the conductance and capacitance obtained from Y matrix,and the AC parameters,such as Sparameters,will be calculated.The small signal AC characteristics of InP/InGaAs DHBTs under proton irradiation are simulated with different fluences of proton irradiation.Simulation results show that the maximum oscillation frequency will be degraded when fluence of proton irradiation is increased.

英文摘要:

A 3D model simulation of InP/InGaAs/InP DHBT is reported in this paper. A comprehensive set of built-in physical models are described, including Stratton's hydrodynamic model, high-fields mobility model and thermionic emission model. A mixed-mode environment is required for AC simulation instead of simulating an isolated HBT, in which the HBT is embedded in an external circuit, and the circuit voltage and current equations are solved along with the Poisson equation and transport equations. In AC simulation, simulator Sentaurus provides the computation of the small signal admittance Y matrix. From the results of Y matrix, the small signal equivalent circuit is constructed with the conductance and capacitance obtained from Y matrix, and the AC parameters, such as S- parameters, will be calculated. The small signal AC characteristics of InP/InGaAs DHBTs under proton irradiation are simulated with different fluences of proton irradiation. Simulation results show that the maximum oscillation frequency will be degraded when fluence of proton irradiation is increased.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754