中文摘要：

A W-band two-stage amplifier MMIC has been developed using a fully passivated 2 20 m gate-width and 0.15 m gate-length InP-based high electron mobility transistor(HEMT) technology.The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology,thus leading to a compact chip-size of 1.85 0.932 mm2 and an excellent small-signal gain of 25.7 dB at 106 GHz.Additionally,an inter-digital coupling capacitor blocks low-frequency signal,thereby enhancing the stability of the amplifier.The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.

英文摘要：

AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.