中文摘要：

InAs/GaSbⅡ类超晶格是目前国际上公认的制备第三代高性能红外探测器的理想材料之一,具有能带结构可调、波长响应范围宽、量子效率高、利于实现大面积焦平面阵列等独特优势。为了充分利用这一材料的优点,对材料进行优化设计,采用Kronig-Penney模型对材料的能带结构进行了理论计算;同时,利用输运理论的质量和动量平衡方程对材料的光电导特性进行了计算分析,探讨了这类材料进行非制冷探测的优势。计算结果对深入认识该类材料的光电特性,从而对材料及器件进行优化设计具有重要的指导意义。

英文摘要：

InAs/GaSb type-II superlattices（SLs） was regarded as one of the excellent material of the third-generation high performance infrared detectors owing to the flexible tuned energy-band structure,wide response wavelength,high quantum efficiency and large area uniformity.Optoelectronic properties of InAs/GaSb Type-Ⅱ superlattices were investigated in order to make best use of such material.The standard Kronig-Penney model was adopted to calculate the electronic states of such SLs.On the basis of the mass and momentum balance equations derived from the Boltzmann equation,theoretical approach was established to calculate the photo-excited electron/hole densities and the ratio of photo/dark-conductivity in the corresponding SL systems.Moreover,the dependence of photo-excited carrier density and the ratio of photo/dark-conductivity in InAs/GaSb type-II SLs on temperature was examined.The result is helpful to understand and further design the InAs/GaSb type-II SLs as uncooled mid-infrared（MIR） detectors.