为了减少原子层沉积(ALD)方法在氧化物薄膜制备过程中ALD反应气对有机电致发光器件(OLED)性能的影响,利用旋涂光交联聚合物技术,直接在OLED上形成有机/无机/有机3层结构的保护薄膜。通过扫描电子显微镜(SEM)、原子力显微镜(AFM)的表面形貌分析表明,3层结构的封装薄膜表面平滑且致密,减少水(H2O)汽在氧化物表面积聚,降低H2O对氧化物薄膜的腐蚀作用,且成膜过程对OLED的各功能层没有伤害。经Ca薄膜的电学方法测量证明,这种3层结构的封装薄膜对气体有极高的阻隔作用,其H2O汽透过率(WVTR)可以达到9.0×10-5 g/(m^2·day),从而实现了对OLED的有效保护。
In order to suppress the negative effect on organic light emitting diodes (OLEDs) during the atomic layer deposition (ALD) encapsulation process, barrier layers are fabricated before and after ALD deposition film to prevent the corrosion of precursor and water vapor. In this work, we developed an organic/inorganic/organic (OI0) hybrid structure to overcome the limitations of ALD oxide film. The spin-coating organic photoresist film plays the role as the primary barrier. It prevents reactant precursor contacting with the electrode and organic layer,and bulk water in the air piling up on the surface of inorganic thin film. The inorganic film deposited by ALD technology between the organic films is used to improve the barrier property of OIO hybrid structure. The microscope, scan electron microscope (SEM) and atomic force microscope (AFM) are used to investigate the film structure and surface properties. The water vapor transmission rate (WVTR) is measured by calcium testing system. The images of SEM and AFM show a smooth and dense OIO three-layer hybrid film. Compared with single inorganic film, the WVTR of OIO hybrid film is from 4. 0 × 10^-1 g/(m^2 day) to 9.0 × 10^-5 g/(m^2 day), which is increased effectively. This technology would he expected as a useful method for protecting OLED.