从硅通孔工艺质量检测角度出发,针对测试样品制备中存在的问题,提出了一种独特的电镜样品制备方法。该方法与聚焦离子束切割技术制作样品方法相比,降低了试样的拟作成本和制作时间。用于观察薄样横截面的电镜样品制备方法在其他领域也具有一定的参考价值。
In terms of imperfections in the fabrication process and quality inspect of TSV technology,a unique preparation method of sample for scanning electron microscope has been proposed from the perspective of technological quality examination.This method dramatically decreases the cost and time for specimen preparation,compared with the focused ion beam technology commonly used in integrated circuit industry.The preparation method of thin sample for cross-section electron microscopy observation,as we proposed,is of a certain value for reference in other related domains.