为研究不同半导体激光照射方法对周围神经损伤的影响,将96只家兔随机分为3周,6周,9周,12周4个观察期组,每个观察期组又随机分为不同照射方法的治疗组和对照组。建立动物模型后,各照射组在术后1d开始照射治疗,激光功率为10mw,每次照射10rain,每天一次,连续照射10d。照射治疗A组对准损伤神经吻合部位进行照射,照射治疗B组照射家兔L5、L6脊髓节段,照射治疗c组在对准吻合处进行照射同时还要照射L5、L6脊髓节段,对照组激光输出功率为零。实验结果表明低能量半导体激光照射能促进轴突再生,改善再生神经功能,以同时照射损伤周围神经部位和相应脊髓节段效果最为显著。
The effect of irradiation methods of low energy semiconductor laser on regeneration of peripheral nerve of rabbit was studies. 96 rabbits were randomly divided into four groups on 3rd, 6th, 9th, 12th weeks of the observation periods. The rabbits with injury of common peroneal nerve in each observation period were divided into the irradiated groups and the control group. The rabbits in each irradiated group were irradiated by semiconductor laser with power of 10 roW, for 10 min once a day, for 10 days in succession. Experimental results showed that low-energy semiconductor laser can promote axinal regeneration and improve nerve regeneration function, and at the same time has the most remarkable results on the irradiated injured peripheral nerve spot and the corresponding spinal cord phases.