中文摘要：

设计并生长了一种新的InP/InGaAs/InP DHBT结构材料,采用在基区和集电区之间插入两层不同禁带宽度的InGaAsP四元系材料的阶梯缓变集电结结构,以解决InP/InGaAs/InP DHBT集电结导带尖峰的电子阻挡效应问题。采用气态源分子束外延(GSMBE)技术,通过优化生长条件,获得了高质量的InP、InGaAs以及与InP晶格相匹配的不同禁带宽度的InGaAsP外延材料。在此基础上,成功地生长出带有阶梯缓变集电区结构的InP基DHBT结构材料。

英文摘要：

A new InP/InGaAs/InP DHBT structure with step-graded composite collector has been designed and grown in this work.Two InGaAsP layers with different band gaps were inserted between collector and base to eliminate the carrier blocking effect.The InP/InGaAs/InP DHBT structures were grown by gas source molecular beam epitaxy.A good crystalline quality of InP,InGaAs and InGaAsP materials was obtained through optimizing the growth conditions.The InP/InGaAs/InP DHBT structures were also grown successfully.