中文摘要：

以四溴化碳（CBr4）作为碳掺杂源．采用气态源分子束外延（GSMBE）技术生长了InP衬底上晶格匹配的重碳掺杂P型GaAsSb材料．通过改变CBrt压力，研究了掺杂浓度在（1-20）×10^19cm^-3范围内的掺杂特性，得到的最大掺杂浓度为2．025×10^20cm^-3，相应的空穴迁移率为20.4cm^2／（V·s）．研究了不同生长温度对掺碳GaAsSb外延层组分、晶格质量和表面粗糙度的影响，结果表明480℃是生长优良晶格质量的最优温度．

英文摘要：

Heavily carbon doped p-type GaAsSb epi-layers with lattice matched to InP substrate are grown by gas source mo- lecular beam epitaxy （GSMBE） using carbon tetrabromide （CBr4） as the carbon source. The doping characteristics of carbon- doped GaAsSb with a hole concentration of （1-20） × 10^19cm^-3 are investigated. A maximal hole concentration of 2. 025 × 10^20 cm^-3 is obtained with a corresponding mobility of 20.4cm^2/（V · s）. The effects of growth temperature on the epi-layer composition,crystalline quality,and surface roughness are also studied experimentally, and it is found that 480℃ is the opti- mal growth temperature at which high quality carbon-doped p-type GaAsSb epi-layers can be obtained.