中文摘要：

采用热分解法制备了钛基IrO2-CeO2二元氧化物涂层电极（Ti／IrO2-CeO2）。通过X射线荧光衍射（XRD），（SEM），循环伏安和交流阻抗等方法研究了退火温度对Ti／IrO2-CeO2涂层电极组织结构与电容性能的影响。结果表明，随退火温度升高，IrO2-CeO2涂层由非晶态向晶态转变，晶化程度逐渐升高；在460～480℃高温退火，IrO2-CeO2涂层中仍含有约28％的非晶态组织，说明CeO2有抑制IrO2晶化的作用。当退火温度为380℃时，电极的晶化程度约为25％，比电容达到最大值，并具有良好的循环稳定性。电极的电荷转移电阻取决于电极的晶化程度，随退火温度升高呈阶梯下降趋势。

英文摘要：

Ti/IrO2-CeO2 electrodes were prepared by thermal decomposition at various annealing temperatures. The influence of the annealing temperature on microstructure, morphology, and capacitive performance of the Ti/IrO2- CeO2 electrodes was investigated by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, cyclic voltammetry and electrochemical impedance spectroscopy. The annealing temperature was found to play a significant role in affecting the microstructure and capacitive performance. The amorphous structure transformed to crystalline with increasing annealing temperature. The structure with about 28% amorphous could be still existed at 460-480℃, which indicated that CeO2 could inhibit crystallization of the IrO2. The Ti/IrO2-CeO2 electrodes annealed at 380 ℃ had the maximum specific capacitance combining with excellent cycling behavior, and the crystallization degree of the Ti/IrO2-CeO2 electrodes was about 25%. Charge transfer resistance of the electrode depended on the degree of crystallization of the electrodes, showing a ladder fall with increasing annealing temperature.