中文摘要：

采用低温热分解法制备了Ti基IrO_2-Ta_2O_5氧化物涂层电极。通过X射线衍射（XRD）,循环伏安曲线,交流阻抗谱,恒流充放电等测试方法分析了Ta含量对IrO_2-Ta_2O_5氧化物涂层组织结构及电容性能的影响。结果表明,Ta_2O_5可抑制IrO_2的晶化程度。随涂层中Ta含量增加,晶化度降低。当Ta含量为60 mol%时,IrO_2-Ta_2O_5电极的结晶度为6.4%,具有较小的电荷转移电阻和最高的比电容（239.2 F/g）,比IrO_2电极比电容（54.1 F/g）提高了近4倍。

英文摘要：

Ti/IrO_2-Ta_2O_5 electrodes were prepared by a low thermal decomposition method. The influence of Ta contents on the microstructure and capacitive performance of the Ti/IrO_2-Ta_2O_5 electrodes was investigated by XRD,cyclic voltammetry,electrochemical impedance spectroscopy and galvanostatic charge-discharge tests. The results show that Ta_2O_5 can inhibit crystallization of the IrO_2. With increasing Ta content,the crystallization degree decreases. When the content of Ta is 60 mol%,the electrode with a content of 6.4% crystalline structure has a superior capacitive performance of 239.2 g/F,which is considerably higher than that of IrO_2 electrode（54.1 g/F）.