探讨了在NaCl(100)衬底上制备Ca0.4Sr0.6Bi4Ti4O15(CSBT)铁电薄膜的最佳制备工艺过程,匀胶速度为2500r/min,热解温度为350℃,退火温度为700℃,退火时间为300 s制备的CSBT铁电薄膜具有较好的钙钛矿相,相对较高的a轴取向度;以制得的CSBT薄膜为模板,采用模板晶粒生长法诱导其铁电陶瓷粉体织构化生长。结果发现:引入CSBT模板膜后,铁电陶瓷块体的a轴择优度提高,半峰宽减小,垂直于平面晶粒数量增加,有利于陶瓷铁电学性能的提高。
The preparation process of a-axis oriented CSBT films deposited on Na Cl( 100) substrates were discussed. With the process parameters of spin coating speed of 2500 r / min,pyrolysis temperature of 350℃,annealing temperature of 700 ℃ and holding time of 300 s,the CSBT ferroelectric films show a higher degree of a-axis orientation with pure perovskite phase. Using the CSBT thin films prepared as templates to induce the textured growth of the ferroelectric ceramic powders,and experimental results show that after the induction of CSBT templates, the ferroelectric ceramics show a-axis preferred orientation,lower full width at half maximum( FWHM),and increased amount of grains perpendicular to the plane. This is conductive to the improvement of the electrical properties of ceramics.