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中文摘要：
采用提拉法生长了高质量、大尺寸、结构完整的声表面波零温度系数切向LGS晶体。XRD图谱显示,生长的晶体为单一相LGS晶体,晶格常数为a=0.816274 nm,c=0.509253 nm,密度为5.7463 g/cm^3。压电常数、介电常数、热膨胀性能等与传统方向生长的晶体一致。用此方向生长的LGS晶体制作声表面波频率温度性能优化的切片,只需要垂直生长方向进行切割,可以大大简化晶体的加工工艺、提高LGS晶体的利用率,节省材料成本。
英文摘要：
High quality large size La3Ga5SiO4（LGS） crystals was successfully grown in the direction of zero temperature coefficient cut,by using Czochralski method.The LGS crystal was characterized by XRD.The results indicated that the as-grown crystal is one phase single crystal of LGS with lattice structure parameters of a=0.816274 nm and c=0.509253 nm.The density of as-grown LGS crystal is 5.7463 g/cm^3.The results of experimental measurements show that as-grown LGS crystal has same piezoelectric,dielectric and thermal expansion properties with the LGS crystals growing along normal orientation.It becomes easy and convenient to manufacture zero TCF SAW devices by directly cutting the as-grown LGS crystal perpendicular to the growth orientation.This simple machining technology will greatly reduce the processing,increase crystal utilization rate and therefore save the expense.
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