中文摘要：

在分析半导体光电位置敏感探测器（PSD）二维枕形结构特性的基础上，采用光敏面与边缘区域分别注入不同离子剂量的方法，研究了一种 PSD 新型结构，这种结构的 PSD 边缘采用了带宽很窄的正方形状的离子注入电阻带形式，输出电极附加了一个较小的正方形框架作为阳极，通过在 PSD 边缘电阻带中注入较高离子剂量的元素，改变 PSD 边缘电阻带的电阻和有效感光面区域电阻的比值；实验模拟结果显示：新型结构的 PSD 可获得较高的位置分辨率、较大的有效光敏面积以及较小的非线性。

英文摘要：

Based on the analyzing of the two-dimensional pincushion position sensitive detector（PSD） structural characteristics,a new PSD structure was studied by implanting different amounts of ions into the photosensitive surface and the edge region.Square ion implantation electric resistance belt with quite narrow band at the edge of PSD,and a small square frame attached to output electrode as the anode were adopted in this new structure.The resistance ratio of edge region and efficient photosensitive surface was changed by implanting higher amount of ions at the edge region of PSD.In experimental simulation,a higher position resolution,larger efficient photosensitive area and smaller non-linearity could be obtained by the new PSD structure.