中文摘要：

为回收废弃LCD面板中的金属铟及高品质玻璃,提出了一种铟锡氧化物（ITO）玻璃资源化回收方法,用HF溶液浸蚀ITO玻璃碎片得富铟溶液和经表面除杂的玻璃基板,富铟溶液经蒸发、浓缩得富铟物,将富铟物溶解并经铝置换、熔炼、提纯得到粗铟,玻璃基板作为配合料进行再生制样.结果表明,ITO玻璃破碎会造成铟流失,8 mol/L HF在3 h内即可有效回收ITO中的铟,制得纯度达92.3%的粗铟,回收率达89.2%.再生玻璃试样成型温度为1462℃,热膨胀系数最大为3.2×10^-6/℃,维氏硬度平均值为584.9,密度为2.430 97 g/cm^3,可见光透射比为75.2,部分性能有所下降,可降低配合料用量,以实现ITO玻璃基板的资源化回收.

英文摘要：

In order to recover indium and high-quality glass from liquid crystal display（LCD） panels, a recovery process was proposed. First, the pieces of indium tin oxide（ITO） glass substrate were leached with hydrofluoric acid to obtain indium-rich solution. After evaporating and concentrating of the solution, indium concentrate was obtained, then after four treatment steps of dissolution, aluminum replacement, melting and purification, crude indium was finally obtained. Meanwhile the glass substrate which was separated from the hydrofluoric acid was used for producing glass as batch. The results showed that the shattering process resulted in loss of indium. The indium could be extracted effectively in 8 mol/L hydrofluoric acid within 3 h, its purity was as high as 92.3% with the recovery rate of 89.2%. The mold temperature of recycled glass sample was 1 462 ℃, thermal expansion coefficient 3.2×10^-6/℃, average value of Vicker＇s hardness 584.9, density of the recycled glass sample 2.430 97 g/cm^3, and visible light transmittance 75.2. Despite of degradation of performances, the goal of recycling and reusing thin film transistor（TFT）-LCD glass substrate could be still realized by reducing appropriate amount of recycled glass in glass production.