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中文摘要：
利用扫描电子显微镜-X射线能量色散谱、微波光电导衰减法和四探针电阻率测试仪等分析设备,结合Fe-Si二元相图,研究了真空定向凝固多晶硅中Fe杂质的赋存形态和硅锭从底部到顶部四个特征位置径向电阻率的分布情况。结果表明：Fe杂质在真空定向凝固多晶硅中的赋存形态主要为α-Fe（Si）和β-Fe（Si）,过饱和固溶体α-Fe（Si）的分解是导致Fe杂质在硅锭中形成沉淀相且浓度分布不均匀的重要原因;Fe杂质在硅锭中不同位置形成的沉淀相与电阻率分布曲线波动相吻合。根据对Fe浓度与电阻率之间的关系以及不同温度下Fe杂质的赋存形态,推导得出了真空定向凝固多晶硅中径向电阻率分布与Fe杂质浓度间的关系式,提出了提高硅锭电阻率均匀性的措施并通过实验得到验证。
英文摘要：
The effect of the Fe-occurrence mode,Fe-content,and cooling temperature on the electrical resistivity distribution of the polysilicon ingot,cast by vacuum directional solidification,was theoretically analyzed with Fe-Si phase-diagram and experimentally investigated with scanning electron microscopy and energy dispersive spectroscopy,microwave photo-conductance decay,and four-point probe. The results showed that the Fe-impurity mainly exists in α-Fe（ Si） and β-Fe（ Si） phases,and that the decomposition of the supersaturated solid solution of α-Fe（ Si） results in formation of the precipitation phase and non-uniform distributions of both Fe-content and resistivity. The relationship between the radial distributions of the resistivity and Fe-density was approximated by an analytical formula. We proposed that a rapid cooling with a mixture of water and ice cube may significantly improve the uniformity of resistivity distribution of the cast polysilicon.
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