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Effect of withdrawal rate on defects of upgraded metallurgical grade (UMG)-silicon prepared by vacuu
  • 期刊名称：Materials Science Forum
  • 时间：2013.3.1
  • 页码：316-319
  • 相关项目：冶金法制备太阳能级多晶硅中的真空精炼研究
作者： Wenhui Ma|Yong Jiang|Yang Zhou|Kuixian Wei|
同期刊论文项目
冶金法制备太阳能级多晶硅中的真空精炼研究
期刊论文 100 会议论文 2 获奖 4
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Numerical study for direction solidification purification high quality silicon to SoG-Si
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Effect of solidification rate on representative impurities distribution in Si-Cu alloy
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New method of boron removal from silicon by electron beam injection
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Back Diffusion of Iron Impurity during Silicon Purification by Vacuum Directional Solidification
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