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中文摘要：
近几年来,在发展较为迅速的冶金法低成本制备太阳能级多晶硅新工艺中,定向凝固技术得到了较好的应用。定向凝固技术在冶金法多晶硅提纯过程中主要用于去除硅中的金属杂质,在铸造过程中用来进行大尺寸柱状晶的生长,以期获得较好的晶体质量和电学性能。本文在详细介绍冶金法多晶硅制备过程中定向凝固提纯去除硅中金属杂质和多晶硅铸造过程中晶体生长与电学性能提升最新研究进展的基础上,提出将冶金法多晶硅定向凝固提纯过程和定向凝固铸造过程合并成一个新型的定向凝固工序,可以兼顾多晶硅的提纯和晶体生长两种功能,既与冶金法多晶硅定向凝固提纯过程不同,也与多晶硅铸造过程中的定向凝固有所区别。该新型定向凝固技术将减少容器材料的使用量,缩短冶金法工艺流程,降低了冶金法多晶硅生产成本,有利于冶金法多晶硅的技术进步和大规模应用。
英文摘要：
In recent years, directional solidification technics is widely used in preparing the solar .grade silicon （SOG-Si） by metallurgical route. It plays an important role to remove metallic impurities from metallurgical grade silicon （MG-Si） during purification of metallurgical mute. While, in casting process, it is used mainly for the growth of large size columnar crystals in silicon ingot. And good crystal quality and the excellent electrical properties can be obtained in this process. In this paper, the latest research progresses of metallic impurities purification by directional solidification in met- allurgical mute, the improvement of crystal quality and the excellent electrical properties by ingot cast have been detailed introduced. On the basis of former studies, we proposed a new directional solidification technics for preparing SOG-Si by metallurgical route in this paper. Compared with present directional solidification for purification and ingot casting process, the new directional solidification technics is optimized, which combines with removal of impurities and ingot casting process. The growth of columnar crystal and the removal of metallic impurities can be carried out in the new directional solidification process at the same time. Therefore, the new directional solidification technics is different from the present directional solidification of purification and ingot casting process. It does not need the remehing process and can cut down the amount of quartz ceramics crucible. And the cost of preparing SOG-Si by metallurgical route is reduced simultaneous- ly. This is beneficial to technology progresses and large-scale application for SOG-Si by metallurgical route.
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Effect of sodium-based slag treatment on the distribution of impurities in metallurgical grade silic
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Effect of calcium-based slag treatment on hydrometallurgical purification of metallurgical-grade sil
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he heat transfer effect on multicrystalline silicon crystal quality during vacuum directional solidi
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Reaction Mechanism and Kinetics of Boron Removal from Metallurgical-Grade Silicon Based on Li2O-SiO2
Effects of Cu contamination on The Electrical Properties of Multicrystalline Silicon Purified by Dir
Distribution of representative impurities in MG-silicon using CaO-SiO2-CaF2 and CaO-SiO2-CaCl2 slags
Effect of Na2O-SiO2 slag treatment on hydrometallurgical purification of metallurgical grade silicon
Effect of withdrawal rate on defects of upgraded metallurgical grade (UMG)-silicon prepared by vacuu
Research on effects of annealing and Al gettering on electrical properties of upgraded metallurgical
Determination and Controlling of Crystal Growth Rate during Silicon Purification by Directional Soli
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