中文摘要：

研究了实现微放电器Ni电极图形化的溅射反转剥离工艺,即采用磁控溅射沉积Ni薄膜,利用图像反转法实现金属剥离.以硅为基底分析了转型烘烤和显影等因素对AR-U4030光刻胶反转的作用,研究了Ni膜溅射功率、时间以及超声振洗等条件对剥离的影响.实验表明,剥离Ni膜厚度为200nm时,图形精度可达2μm.最后,利用溅射反转剥离工艺实现了倒金字塔深槽中金属的剥离,简化了微放电器Ni电极的图形化工艺,由此制备的微放电器在SF6等离子体中稳定放电.

英文摘要：

The image reversal lift-off process,which is used to pattern the microplasma reactor electrode,is studied.Nickel film is deposited by sputtering and then formed on electrodes using lift-off process based on AR-U4030 photoresist.The effects of reversal bake and develop time on the pattern quality of the photoresist are analysed.Furthermore,the influence of the sputtering power,time and ultrasonic cleaning on the lift-off process are investigated.The thickness of Ni obtained here achieved more than 200 nm and the image resolution is higher than 2 μm.Finally,the inverted square pyramid microplasma reactor is fabricated using this lift-off process,and the electrical characteristic of the reactor operating stably in SF6 is presented.